Description
APOL-LO 3200 Series is a negative-tone photoresist engineered to produce a controllable lift-off (undercut) profile for metal patterning in compound semiconductor and LED flows. It delivers improved resolution and a wide process window using industry-standard developers.
Key features
- Tone: Negative (lift-off/undercut profile)
- Exposure bands: i-line, broadband
- Film thickness: 2 - 10+ µm
- Resolution: Optimized for clean metal lift-off; improved resolution with tunable undercut (process-dependent)
- Developer: Industry-standard aqueous TMAH developers (≈0.26 N typical)
- Chemistry: Negative-tone formulation engineered to produce controllable lift-off (undercut) sidewalls
- Remover compatibility: NMP or DMSO at 50–80 °C
- Drop-in Replacement for: nLOF 2020, nLOF 2035, nLOF 2070
Applications
Compound semiconductors, LED metallization and lift-off, and other metal patterning flows requiring clean undercut profiles.
| Current Resist | KemLab Replacement | Approx. KemLab FT (microns) Range |
| AZ nLOF 2020 | APOL-LO 3202 | 2 – 4 |
| AZ nLOF 2035 | APOL-LO 3204 | 3 – 6 |
| AZ nLOF 2070 | APOL-LO 3207 | 5 – 10+ |
