KL7000 PFAS-Free Universal Positive Photoresist (Film Thickness: 0.15µm - 3.0µm)

KL7000 PFAS-Free, Fluorine-Free i/g-Line Positive Photoresist delivers high sensitivity and sub-micron resolution for broadband, i-line, h-line, and g-line lithography while eliminating PFAS and other fluorine-containing materials. With single-coat coverage from 0.15 to 3.0 µm, KL7000 provides a wide process window and consistent film uniformity. It is compatible with metal-ion-free (MIF) and metal-ion-bearing (MIB) developers and is optimized for 0.26 N TMAH, enabling straightforward integration into established wet-process modules. Typical processes achieve 0.55 µm dense line/space and 0.40 µm isolated features, making KL7000 a strong, environmentally preferred drop-in alternative to S1800™, AZ®1500, and other general-use positive resists without compromising throughput or yield.

Key features

• Tone: Positive
• Exposure bands: i-line, h-line, g-line, NUV, broadband
• Film thickness: 0.15 - 3.0 µm
• Resolution: 0.55 µm dense line/space; 0.40 µm isolated line (process-dependent)
• Developer: MIF & MIB; optimized for 0.26 N TMAH
• Chemistry: PFAS-free and fluorine-free formulation
• Remover compatibility: NMP or DMSO at 50–80 °C
• Drop-in Replacement for: S1800™, AZ 1500, and other general-use positive resists

Applications
IC fabrication, thin-film patterning, MEMS, micro-optics, microfluidics, and process development where environmentally preferred chemistries and sub-micron features are required.

KL7000 Datasheet